The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2017

Filed:

Dec. 20, 2011
Applicants:

Katsushi Matsumoto, Kobe, JP;

Junichi Nakai, Takasago, JP;

Toshiaki Takagi, Takasago, JP;

Inventors:

Katsushi Matsumoto, Kobe, JP;

Junichi Nakai, Takasago, JP;

Toshiaki Takagi, Takasago, JP;

Assignees:

Kobe Steel, Ltd., Kobe-shi, JP;

KOBELCO RESEARCH INSTITUTE, INC., Kobe-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/00 (2006.01); C23C 14/34 (2006.01); C22C 9/00 (2006.01); C22C 21/00 (2006.01); C22C 1/02 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3407 (2013.01); C22C 1/02 (2013.01); C22C 9/00 (2013.01); C22C 21/00 (2013.01); C23C 14/3414 (2013.01);
Abstract

Film-formation rate can be increased in the pre-sputtering and in the subsequent sputtering onto a substrate or the like, and sputtering failures such as splashes can be inhibited, by making an Al-based alloy or Cu-based alloy spurting target fulfill the following requirements (1) and/or (2) when the total area ratio of crystal orientations <001>±15°, <011>±15°, <111>±15°, <112>±15°, and <012>±15° in the sputtering surface normal direction in the depth within 1 mm from the uppermost surface of the sputtering target is referred to as a P value: (1) the area ratio PA of <011>±15° to the P value: 40% or lower; and (2) the total area ratio PB of <001>±15° and <111>±15° to the P value: 20% or higher.


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