The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2017

Filed:

Jul. 02, 2013
Applicants:

Kazuhiro Nagata, Yokohama-shi, JP;

Shimizu Densetsu Kogyo Co., Ltd., Amagasaki-shi, JP;

Inventors:

Kazuhiro Nagata, Yokohama, JP;

Miyuki Kanazawa, Tokyo, JP;

Assignees:

Other;

SHIMIZU DENSETSU KOGYO CO., LTD, Amagasaki-shi, Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/025 (2006.01); B01J 19/12 (2006.01); C01B 33/113 (2006.01); F27B 3/08 (2006.01); F27B 5/04 (2006.01); F27B 5/14 (2006.01); F27D 99/00 (2010.01);
U.S. Cl.
CPC ...
C01B 33/025 (2013.01); B01J 19/126 (2013.01); C01B 33/113 (2013.01); F27B 3/08 (2013.01); F27B 5/04 (2013.01); F27B 5/14 (2013.01); F27D 99/0006 (2013.01); B01J 2219/123 (2013.01); B01J 2219/1215 (2013.01); B01J 2219/1233 (2013.01); B01J 2219/1239 (2013.01); B01J 2219/1242 (2013.01); B01J 2219/1266 (2013.01); B01J 2219/1269 (2013.01); B01J 2219/1296 (2013.01);
Abstract

A method for producing silicon using microwave and a microwave reduction furnace for use therewith are disclosed, with which it is possible to quickly reduce silica to quickly produce silicon. A material of a mixture of a silica powder and a graphite powder of a mixture of a silica powder, a silicon carbide powder and a graphite powder is set in a refractory chamber. Then, the material set in the chamber is irradiated with microwave. The graphite powder absorbs a microwave energy to increase the temperature, after which silica and graphite react with each other to further increase the temperature while producing silicon carbide, and the heated silica and silicon carbide react with each other. SiO produced through this reaction and silicon carbide are allowed to react with each other, thereby producing high-purity silicon.


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