The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2017

Filed:

Jul. 26, 2015
Applicant:

Playnitride Inc., Tainan, TW;

Inventors:

Yen-Lin Lai, Tainan, TW;

Jyun-De Wu, Tainan, TW;

Assignee:

PlayNitride Inc., Tainan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01);
Abstract

An epitaxial structure including an epitaxial substrate, a first buffer layer, a first pattern mask layer, a second buffer layer and a second pattern mask layer. The first buffer layer is disposed on the epitaxial substrate. The first pattern mask layer is disposed on the first buffer layer. The second buffer layer is disposed on the first pattern mask layer and a part of the first buffer layer. The second pattern mask layer is disposed on the second buffer layer. A projection of the first pattern mask layer projected on the first buffer layer and a projection of the second pattern mask layer projected on the first buffer layer cover at least 70% of the total area of the first buffer layer.


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