The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Aug. 25, 2015
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Po-Li Shih, Hsinchu, TW;
Yi-Chun Kao, Hsinchu, TW;
Chih-Lung Lee, Hsinchu, TW;
Kuo-Lung Fang, Hsinchu, TW;
Hsin-Hua Lin, Hsinchu, TW;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Abstract
A method for manufacturing a thin film transistor include following steps. A substrate is provided. A gate electrode and an electrically insulating layer are formed on the substrate. An electric conducting layer is formed on the electrically insulating layer. A first photoresist pattern layer is formed on the electric conducting layer. A portion of the electric conducting layer which is not covered by the first photoresist pattern layer is etched to form an electric conduction layer. A semiconductor layer is formed on the electric conduction layer. A second photoresist pattern layer is formed. A portion of the semiconductor layer which is not covered by the second photoresist pattern layer is etched to form the channel layer covering the electric conduction layer. A source electrode and a drain electrode are formed at the two lateral portions of the channel layer respectively. The thin film transistor is also provided.