The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
May. 09, 2014
Texas Instruments Incorporated, Dallas, TX (US);
Kezhakkedath R. Udayakumar, Dallas, TX (US);
Kemal Tamer San, Plano, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
Thermal treatment of a semiconductor wafer in the fabrication of integrated circuits including MOS transistors and ferroelectric capacitors, including those using lead-zirconium-titanate (PZT) ferroelectric material, to reduce variation in the electrical characteristics of the transistors. Thermal treatment of the wafer in a nitrogen-bearing atmosphere in which hydrogen is essentially absent is performed after formation of the transistors and capacitor. An optional thermal treatment of the wafer in a hydrogen-bearing atmosphere prior to deposition of the ferroelectric treatment may be performed.