The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Jul. 07, 2015
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventors:
Masatoshi Aketa, Kyoto, JP;
Yuta Yokotsuji, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/095 (2006.01); H01L 29/47 (2006.01); H01L 29/812 (2006.01); H01L 31/07 (2012.01); H01L 31/108 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/872 (2006.01); H01L 21/04 (2006.01); H01L 21/265 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/046 (2013.01); H01L 21/0415 (2013.01); H01L 21/26546 (2013.01); H01L 29/0611 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/08 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/36 (2013.01); H01L 29/66143 (2013.01); H01L 29/66212 (2013.01); H01L 29/872 (2013.01);
Abstract
A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer that is formed on a surface layer portion of the drift layer and that has higher resistance than the drift layer. The high-resistance layer is formed by implanting impurity ions from the surface of the semiconductor layer and then undergoing annealing treatment at less than 1500° C.