The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Sep. 10, 2015
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Megumi Ishiduki, Yokkaichi, JP;
Murato Kawai, Yokkaichi, JP;
Tadashi Iguchi, Yokkaichi, JP;
Yoshihiro Yanai, Yokkaichi, JP;
Takuya Inatsuka, Yokkaichi, JP;
Yoichi Minemura, Yokkaichi, JP;
Takuya Mizutani, Yokkaichi, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Abstract
A nonvolatile semiconductor memory device comprises: a memory cell region having a memory cell disposed therein; a peripheral region including a first stepped structure in which an end of a lower first layer is further from the memory cell region than is an end of an upper first layer; and a second stepped structure disposed on the first stepped structure, in which an end of a lower third layer is disposed further from the memory cell region than is an end of an upper third layer, a length in a second direction being shorter than a length in the second direction of the first layer or the second layer contacted by the second stepped structure, and a length in a third direction of the second stepped structure being shorter than a length in the third direction of the first layer or the second layer contacted by the second stepped structure.