The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Nov. 10, 2015
Globalfoundries Inc., Grand Cayman, KY;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A method includes providing a semiconductor structure including a nonvolatile memory cell element and one or more electrically insulating layers covering the nonvolatile memory cell element. The nonvolatile memory cell element includes a source region, a channel region, a drain region and a floating gate over at least a first portion of the channel region. A first opening is formed in the electrically insulating layers over the floating gate, a control gate insulation layer is deposited, and a second opening is formed in the electrically insulating layers over the drain region. The first opening and the second opening are filled with an electrically conductive material. The electrically conductive material in the first opening provides a control gate of the nonvolatile memory cell element and the electrically conductive material in the second opening provides an electrical contact to the drain region.