The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Aug. 29, 2014
Applicant:
Rfhic Corporation, Anyang-si, KR;
Inventor:
Firooz Nasser-Faili, Santa Clara, CA (US);
Assignee:
RFHIC CORPORATION, Anyang, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/27 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3732 (2013.01); C23C 16/0245 (2013.01); C23C 16/0254 (2013.01); C23C 16/0272 (2013.01); C23C 16/27 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02444 (2013.01); H01L 21/02488 (2013.01); H01L 21/02513 (2013.01); H01L 21/02527 (2013.01); H01L 21/02658 (2013.01); H01L 29/2003 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device structure includes A Raman signal of the diamond nucleation layer exhibits an sp3 carbon peak at 1332 cmhaving a full width half maximum of no more than 5.0 cm, and An average nucleation density at a nucleation surface is no less than 1×10cmand no more than 1×10cm.