The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2017

Filed:

May. 02, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Stephen W. Bedell, Wappingers Falls, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Katherine L. Saenger, Ossining, NY (US);

Abdelmajid Salhi, Riyadh, SA;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); H01L 29/20 (2006.01); H01L 29/161 (2006.01); H01L 21/324 (2006.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); H01L 21/02532 (2013.01); H01L 21/02538 (2013.01); H01L 21/304 (2013.01); H01L 21/324 (2013.01); H01L 21/32051 (2013.01); H01L 21/6836 (2013.01); H01L 29/161 (2013.01); H01L 29/20 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68381 (2013.01);
Abstract

A method comprises providing a handle substrate having a front surface and a back surface; providing a layer of flexible semiconductor material having a front surface and a back surface and an at least partially sacrificial backing layer stack on the back surface of the layer of flexible semiconductor material; bonding the front surface of the layer of flexible semiconductor material to the front surface of the handle substrate; removing at least a portion of the at least partially sacrificial backing layer stack from the back surface of the layer of flexible semiconductor material; opening outgassing paths through the layer of flexible semiconductor material; and processing the layer of flexible semiconductor material.


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