The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2017

Filed:

Oct. 15, 2014
Applicant:

Nisene Technology Group, Watsonville, CA (US);

Inventors:

Alan M. Wagner, Watsonville, CA (US);

Ravin Krishnan, Johor, MY;

Assignee:

Nisene Technology Group, Watsonville, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01); H01L 21/67 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67126 (2013.01); H01J 37/32192 (2013.01); H01L 21/31138 (2013.01); H01L 21/56 (2013.01); H01L 21/67069 (2013.01);
Abstract

A microwave induced plasma decapsulation system and method for decapsulation a packaged semiconductor device applies a microwave induced plasma effluent along with etchant gases electrons, ions and free radicals that are chemically reactive to remove the epoxy molding compound encapsulating the semiconductor device. In one embodiment, the decapsulation system utilizes a microwave generator and a coaxial plasma source. In another embodiment, the decapsulation system utilizes a microwave generator, an electromagnetic surface wave plasma source, and a dielectric plasma discharge tube.


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