The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2017

Filed:

Feb. 07, 2013
Applicant:

The Regents of the University of Michigan, Ann Arbor, MI (US);

Inventors:

Kyusang Lee, Ann Arbor, MI (US);

Jeramy Zimmerman, Golden, CO (US);

Stephen R. Forrest, Ann Arbor, MI (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 31/18 (2006.01); H01L 21/3065 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 21/3247 (2013.01); H01L 21/3065 (2013.01); H01L 21/3245 (2013.01); H01L 31/1896 (2013.01); H01L 33/007 (2013.01); Y02E 10/50 (2013.01);
Abstract

There is disclosed a method of preserving the integrity of a growth substrate in a epitaxial lift-off method, the method comprising providing a structure comprising a growth substrate, one or more protective layers, a sacrificial layer, and at least one epilayer, wherein the sacrificial layer and the one or more protective layers are positioned between the growth substrate and the at least one epilayer; releasing the at least one epilayer by etching the sacrificial layer with an etchant; and heat treating the growth substrate and/or at least one of the protective layers.


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