The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9548208 B1

Date of Patent:

Jan. 17, 2017

Filed:

Feb. 17, 2016

Method for patterning an underlying layer

Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Boon Teik Chan, Leuven, BE;

Zheng Tao, Leuven, BE;

Nadia Vandenbroeck, Geetbets, BE;

Safak Sayan, Tervuren, BE;

Assignee:

IMEC VZW, Leuven, BE;

Attorney:

McDonnell Boehnen Hulbert & Berghoff LLP

Primary Examiner:

Bradley K Smith

Int. Cl.

CPC ...

H01L 21/311 (2006.01); H01L 21/308 (2006.01); H01L 21/033 (2006.01); H01L 29/66 (2006.01);

U.S. Cl.

CPC ...

H01L 21/3081 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/3086 (2013.01); H01L 29/66795 (2013.01);

Abstract

A method for patterning an underlying layer is described, the method comprising providing a guiding layer on the underlying layer, the guiding layer comprising guiding structures and being substantially planar; providing a block-copolymer layer on the guiding layer; inducing phase separation of the block-copolymer layer in a regular pattern of structures of a first and a second polymer component, whereby one of the components aligns to the guiding structures, by chemo-epitaxy; thereafter, removing a first of the components of the block-copolymer layers completely, leaving a regular pattern of structures of the second component; providing a planarizing layer over the regular pattern of structures of the second component and the guiding layer; removing a portion of the planarizing layer, thereby leaving a regular pattern of structures of the planarizing layer at positions in between the structures of the second component, and exposing the structures of the second component; removing the structures of the second component, selectively with respect to the structures of the planarizing layer; and patterning the underlying layer, thereby using the structures of the planarizing layer as a mask.

Find Patent Forward Citations

Chan, Boon. (2017). Method for patterning an underlying layer (U.S. Patent No. 9548208). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9548208

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