The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Sep. 02, 2015
Applicant:
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Inventors:
Junya Nishii, Kiyosu, JP;
Tohru Oka, Kiyosu, JP;
Assignee:
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 29/49 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28264 (2013.01); H01L 21/0228 (2013.01); H01L 29/4966 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7813 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01);
Abstract
There is provided a semiconductor device comprising a semiconductor layer that is made of a gallium-containing group III-V compound; and a first insulating film that is in contact with the semiconductor layer and contains silicon. An average density of gallium in the first insulating film between an interface of the first insulating film and the semiconductor layer and a plane away from the interface by 30 nm is less than 1.0×10cm. This configuration suppresses a decrease in flat band voltage and a decrease in threshold voltage.