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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9548204 B1

PDFFull Text
Date of Patent:
Jan. 17, 2017

Filed:

Sep. 02, 2015

Semiconductor device, manufacturing method of the same and method of suppressing decrease of flat band voltage

Applicant:

Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;

Inventors:

Junya Nishii, Kiyosu, JP;

Tohru Oka, Kiyosu, JP;

Assignee:

TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;

Attorney:

McGinn IP Law Group, PLLC

Primary Examiner:

Tan N Tran

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 29/49 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28264 (2013.01); H01L 21/0228 (2013.01); H01L 29/4966 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7813 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01);
Abstract

There is provided a semiconductor device comprising a semiconductor layer that is made of a gallium-containing group III-V compound; and a first insulating film that is in contact with the semiconductor layer and contains silicon. An average density of gallium in the first insulating film between an interface of the first insulating film and the semiconductor layer and a plane away from the interface by 30 nm is less than 1.0×10cm. This configuration suppresses a decrease in flat band voltage and a decrease in threshold voltage.

Find Patent Forward Citations

Nishii, Junya. (2017). Semiconductor device, manufacturing method of the same and method of suppressing decrease of flat band voltage (U.S. Patent No. 9548204). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9548204

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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