The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Mar. 18, 2016
Dielectric thin film element, antifuse element, and method of producing dielectric thin film element
Murata Manufacturing Co., Ltd., Nagaokakyo-shi, Kyoto-fu, JP;
Toshiyuki Nakaiso, Nagaokakyo, JP;
Yutaka Takeshima, Nagaokakyo, JP;
Yutaka Ishiura, Nagaokakyo, JP;
Yuji Irie, Nagaokakyo, JP;
Shinsuke Tani, Nagaokakyo, JP;
Jun Takagi, Nagaokakyo, JP;
MURATA MANUFACTURING CO., LTD., Nagaokakyo-Shi, Kyoto-Fu, JP;
Abstract
A dielectric thin film element having a high humidity resistance is provided. A dielectric thin film element includes a capacitance section having a dielectric layer and a pair of electrode layers formed on the respective upper and lower surfaces of the dielectric layer. Furthermore, a protection layer is provided on the capacitance section, a pair of interconnect layers are drawn out to an upper surface of the protection layer, and external electrodes are formed to be electrically connected to the interconnect layers. Further, first surface metal layers cover a portion of the interconnect layers that extends along the inner surface of the openings and second surface metal layers are formed at end of the first surface metal layers.