The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2017

Filed:

Aug. 06, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Aravinthan Athmanathan, Adliswil, CH;

Daniel Krebs, Zurich, CH;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/1286 (2013.01); H01L 45/1293 (2013.01); H01L 45/14 (2013.01); G11C 2013/008 (2013.01); G11C 2213/50 (2013.01);
Abstract

A memory device for thermoelectric heat confinement and method for producing same. The memory device includes a plurality of phase-change memory cells, wherein each of the phase-change memory cells has a first electrode, a second electrode and a phase-change material. The first electrode and the phase-change material are arranged such that a surface normal of a dominating interface for a current flow between the first electrode and the phase-change material points on one side to the phase-change material of the phase-change memory cell and on an opposite side to a phase-change material of a neighboring phase-change memory cell. A method for producing a memory device for thermoelectric heat confinement is also provided.


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