The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2017

Filed:

Dec. 30, 2015
Applicant:

Socionext Inc., Yokohama-shi, Kanagawa, JP;

Inventors:

Morimi Arita, Yokohama, JP;

Tomoya Tsuruta, Koganei, JP;

Tomoyuki Yamada, Fussa, JP;

Assignee:

SOCIONEXT, INC., Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
G11C 7/222 (2013.01); G11C 5/148 (2013.01);
Abstract

Characteristics of each transistor in a semiconductor device including a transistor of a memory cell are measured by an ASV monitoring circuit, a power supply voltage supplied to the semiconductor device is determined based on the measured characteristics of the transistor, a data read-out speed of the memory cell under the determined power supply voltage supplied is measured while changing a signal level of a word line by an SRAM word line monitoring circuit, the signal level of the word line is determined by comparing the measured data read-out speed of the memory cell and a specification range of the memory cell, and the signal level of the word line is appropriately set at the power supply voltage applied by the ASV.


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