The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2017

Filed:

Mar. 13, 2013
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Yoshihiko Yanagisawa, Toyama, JP;

Tetsuaki Inada, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/52 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4405 (2013.01); C23C 16/455 (2013.01); C23C 16/45551 (2013.01); C23C 16/52 (2013.01); H01J 37/32862 (2013.01); H01J 37/32889 (2013.01); H01J 2237/335 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02222 (2013.01); H01L 21/02263 (2013.01);
Abstract

A semiconductor device manufacturing method includes: a step wherein a processing substrate to be processed is placed on a substrate mounting member that is provided in a processing chamber having a plurality of gas supply regions; a film-forming step wherein a processing gas is supplied to the processing chamber, and the substrate is processed; a step wherein the substrate is carried out from the processing chamber; and a cleaning step wherein the density of the cleaning gas is controlled, while controlling cleaning gas quantities in the gas supply regions, respectively, in a state wherein the substrate is not placed in the processing chamber.


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