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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9546415 B1

PDFFull Text
Date of Patent:
Jan. 17, 2017

Filed:

Sep. 17, 2014

Composite transparent electrodes

Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Hyeon Cheol Park, Hwaseong-si, KR;

Kwang Hee Kim, Seoul, KR;

Chan Kwak, Gyeonggi-do, KR;

Yoon Chul Son, Hwaseong-si, KR;

Sang Mock Lee, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Cuong Q Nguyen

Assistant Examiner:

Tong-Ho Kim

Int. Cl.
CPC ...
H01B 1/02 (2006.01); H01B 13/00 (2006.01); C23C 14/00 (2006.01); G06F 3/041 (2006.01); H01L 31/0224 (2006.01); C23C 14/02 (2006.01); C23C 14/06 (2006.01); C23C 14/08 (2006.01); H01B 1/00 (2006.01); H01B 1/08 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0036 (2013.01); C23C 14/024 (2013.01); C23C 14/0617 (2013.01); C23C 14/0641 (2013.01); C23C 14/086 (2013.01); G06F 3/041 (2013.01); H01B 1/00 (2013.01); H01B 1/08 (2013.01); H01L 31/022466 (2013.01); G06F 2203/04103 (2013.01); Y10T 428/265 (2015.01);
Abstract

Disclosed are a composite transparent electrode, a production method thereof, and an electronic device including the same, wherein the composite transparent electrode includes a metal nitride thin film including at least one of indium (In), titanium (Ti), zinc (Zn), zirconium (Zr), and gallium (Ga), and a metal oxide thin film including at least one of indium (In), zinc (Zn), tin (Sn), and titanium (Ti), the metal oxide thin film being formed on one surface or opposite surfaces of the metal nitride thin film.

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