The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Oct. 01, 2015
Canon Kabushiki Kaisha, Tokyo, JP;
Ryoji Kanri, Zushi, JP;
Atsunori Terasaki, Kawasaki, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
An object of the present invention is to provide a processing method of a silicon substrate, capable of suppressing breakage of thin silicon or a thin film structure of an intermediate layer in etching first and second silicon substrates. According to the present invention, a first silicon substrate and a second silicon substrate are bonded to each other while holding an intermediate layer having an opening between both of the silicon substrates in a bonding step. A closed space defined by at least one of the first and second silicon substrates and the opening at least partly embedded with a filler in a filling step. Furthermore, a liquid supply port is formed in such a manner as to penetrate the filler in the opening and the second silicon substrate from the first silicon substrate in an etching step.