The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Sep. 10, 2015
Applicant:

Huazhong University of Science and Technology, Wuhan, CN;

Inventors:

Xiangshui Miao, Wuhan, CN;

Yi Li, Wuhan, CN;

Yingpeng Zhong, Wuhan, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/08 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); H03K 19/177 (2006.01); G11B 5/02 (2006.01); H03K 19/18 (2006.01);
U.S. Cl.
CPC ...
H03K 19/08 (2013.01); G11B 5/02 (2013.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0097 (2013.01); H03K 19/1776 (2013.01); H03K 19/18 (2013.01);
Abstract

A non-volatile logic device, including: a substrate, a magnetic head, a base electrode, an insulating layer, a phase-change magnetic film, and a top electrode. The substrate includes a silicon substrate and an active layer attached to the silicon substrate. The base electrode includes an N-type silicon layer, a P-type silicon layer and a heating layer, the N-type silicon layer and the P-type silicon layer constitute a PN diode structure, and the size of the heating layer is smaller than that of the P-type silicon layer. The phase-change magnetic film is deposited on the insulating layer and is electrically contacted with the heating layer. The top electrode and the base electrode are connected to an external electrical pulse signal, and an external magnetic field parallel to a two dimensional plane of the phase-change magnetic film is applied to the non-volatile logic device.


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