The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Jun. 16, 2015
Applicant:

Playnitride Inc., Tainan, TW;

Inventors:

Kuan-Yung Liao, Tainan, TW;

Yun-Li Li, Tainan, TW;

Chih-Ling Wu, Tainan, TW;

Yen-Lin Lai, Tainan, TW;

Assignee:

PlayNitride Inc., Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); F21K 99/00 (2016.01); F21V 9/16 (2006.01); H01L 33/44 (2010.01); H01L 33/08 (2010.01); H01L 33/00 (2010.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 33/508 (2013.01); H01L 33/08 (2013.01); H01L 21/02488 (2013.01); H01L 21/02494 (2013.01); H01L 21/02502 (2013.01); H01L 33/007 (2013.01); H01L 33/502 (2013.01);
Abstract

An epitaxy base adapted to form a light-emitting device on is provided. The epitaxy base includes a substrate and a patterned wavelength conversion structure disposed on a part of the substrate and protruding out from the substrate. A light-emitting device including the epitaxy base, a first type semiconductor layer, an emitting layer and a second type semiconductor layer is provided. The first type semiconductor layer is disposed on the substrate and the patterned wavelength conversion structure. The emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the emitting layer.


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