The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Nov. 28, 2014
Seoul Viosys Co., Ltd., Ansan-si, KR;
Ki Yon Park, Ansan-si, KR;
Jeong Hun Heo, Ansan-si, KR;
Hwa Mok Kim, Ansan-si, KR;
Chang Suk Han, Ansan-si, KR;
Hyo Shik Choi, Ansan-si, KR;
SEOUL VIOSYS CO., LTD., Ansan-si, KR;
Abstract
A UV light emitting diode and a method of fabricating the same are provided. The light emitting diode includes an active area between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer, wherein the active area includes a plurality of barrier layers containing Al, a plurality of well layers containing Al and alternately arranged with the barrier layer, and at least one conditioning layer. Each conditioning layer is placed between the well layer and the barrier layer adjacent to the well layer and is formed of a binary nitride semiconductor. The design of the conditioning layer can reduce stress of the active area while allowing uniform control of the composition of the well layers and/or the barrier layers.