The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Nov. 13, 2015
Jin-young Lim, Gwacheon-si, KR;
Tan Sakong, Seoul, KR;
Byoung-kyun Kim, Seongnam-si, KR;
Jong-hak Kim, Hwaseong-si, KR;
Jin-young Lim, Gwacheon-si, KR;
Tan Sakong, Seoul, KR;
Byoung-kyun Kim, Seongnam-si, KR;
Jong-hak Kim, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD, Gyeonggi-do, KR;
Abstract
A light-emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits. The light-emitting device further includes a layer-quality improvement layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits with substantially same size and shape as the plurality of V-pits of the active layer, wherein layer-quality improvement layer is a group III-V semiconductor layer including Al or In. Due to the improved layer quality, the luminescent quality of the light-emitting device is improved.