The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
May. 12, 2014
Applicant:
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Inventors:
Assignee:
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/04 (2010.01); H01L 33/08 (2010.01); H01L 33/10 (2010.01);
U.S. Cl.
CPC ...
H01L 33/10 (2013.01); H01L 33/005 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01);
Abstract
An optoelectronic device () having a semiconductor layer structure () comprising a first light-active layer () and a second light-active layer (). A first tunnel junction () is formed between the first light-active layer () and the second light-active layer (). A first Bragg reflector () is formed between the first light-active layer () and the first tunnel junction (). A second Bragg reflector () is formed between the second light-active layer () and the first tunnel junction ().