The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Oct. 12, 2011
Applicants:
Kirstin Alberi, Denver, CO (US);
Angelo Mascarenhas, Lakewood, CO (US);
Mark Wanlass, Golden, CO (US);
Inventors:
Kirstin Alberi, Denver, CO (US);
Angelo Mascarenhas, Lakewood, CO (US);
Mark Wanlass, Golden, CO (US);
Assignee:
Alliance for Sustainable Energy, LLC, Golden, CO (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/04 (2010.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/30 (2010.01); H01L 33/32 (2010.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/04 (2013.01); H01L 33/005 (2013.01); H01L 33/0066 (2013.01); H01L 33/12 (2013.01); H01L 33/305 (2013.01);
Abstract
High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one AlInP layer, and a step-grade buffer between the substrate and at least one AlInP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of AlInP is reached.