The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Sep. 30, 2013
Applicant:
First Solar, Inc., Perrysburg, OH (US);
Inventor:
Charles Edward Wickersham, Columbus, OH (US);
Assignee:
First Solar, Inc., Perrysburg, OH (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/073 (2012.01); H01L 31/18 (2006.01); H01L 31/20 (2006.01); C30B 1/02 (2006.01); C30B 1/12 (2006.01); C30B 29/48 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022441 (2013.01); C30B 1/023 (2013.01); C30B 1/12 (2013.01); C30B 29/48 (2013.01); H01L 31/022425 (2013.01); H01L 31/073 (2013.01); H01L 31/1872 (2013.01); H01L 31/20 (2013.01); Y02E 10/543 (2013.01); Y02P 70/521 (2015.11);
Abstract
A method for manufacturing a photovoltaic device includes a step of depositing one of an amorphous layer of ZnTe and a multilayer stack of Zn and Te adjacent a semiconductor layer. The one of the amorphous layer and the multilayer stack is then subjected to an energy impulse at a temperature equal to or greater than its critical temperature. The energy impulse results in an explosive crystallization to form a polycrystalline layer of ZnTe from the one of the amorphous layer and the multilayer stack.