The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Mar. 11, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/306 (2006.01); H01L 29/78 (2006.01); H01L 27/085 (2006.01); H01L 29/66 (2006.01); H01L 21/324 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7853 (2013.01); H01L 21/0262 (2013.01); H01L 21/02521 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/324 (2013.01); H01L 29/0653 (2013.01); H01L 29/0692 (2013.01); H01L 29/66795 (2013.01); H01L 29/66818 (2013.01);
Abstract
At least one method, apparatus and system disclosed herein fin field effect transistor (finFET) comprising a bulbous fin head. A fin of a gate of a transistor is formed. A first recess step is performed for striping a hard mask material by a first dimension to expose a first portion of the fin. An epitaxy layer is formed upon the first portion. An oxidation process is performed upon the fin. An oxide removal process is performed upon the fin to provide a bulbous shape upon the first portion.