The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Jul. 06, 2012
Joff Derluyn, Sint-Joris-Weert, BE;
Stefan Degroote, Scherpenheuval-Zichem, BE;
Marianne Germain, Liege, BE;
Joff Derluyn, Sint-Joris-Weert, BE;
Stefan Degroote, Scherpenheuval-Zichem, BE;
Marianne Germain, Liege, BE;
EpiGaN NV, Hasselt, BE;
Abstract
Disclosed are methods of growing III-V epitaxial layers on a substrate, a semiconductor structure comprising a substrate, a device comprising such a semiconductor structure, and an electronic circuit. Group III-nitride devices, such as, for example, high-electron-mobility transistors, may include a two-dimensional electron gas (2DEG) between two active layers. For example, the 2DEG may be between a GaN layer and a AlGaN layer. These transistors may work in depletion-mode operation, which means the channel has to be depleted to turn the transistor off. For certain applications, such as, for example, power switching or integrated logic, negative polarity gate supply is undesired. Transistors may then work in enhancement mode (E-mode).