The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Dec. 12, 2013
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Zuqiang Wang, Beijing, CN;

Chien Hung Liu, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/062 (2012.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 49/02 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66757 (2013.01); H01L 27/124 (2013.01); H01L 27/1259 (2013.01); H01L 27/1288 (2013.01); H01L 28/88 (2013.01); H01L 45/1691 (2013.01);
Abstract

The embodiments of the present invention provide a thin film transistor driving backplane and a manufacturing method thereof, and a display panel. The manufacturing method may comprise: manufacturing a backplane base disposed with a plurality of active device structures; disposing an electrode layer on the backplane base; and manufacturing the electrode layer into a source electrode, a drain electrode and a pixel electrode integrally disposed with the drain electrode by one patterning process. According to the embodiment of the present invention, the electrode layer is manufactured into a plurality of source electrodes, drain electrodes and pixel electrodes, integrally disposed with the drain electrode, by one time patterning process, so that the source electrode, the drain electrode and the pixel electrode are all at the same electrode layer, and the source electrode, the drain electrode and the pixel electrode whose formation needs two patterning processes in the existing method, is simplified to one time patterning process, so it reduces the thickness of the thin film transistor driving backplane, simplifies the manufacturing step, and saves the manufacturing cost.


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