The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Sep. 12, 2014
Applicant:
Soraa, Inc., Fremont, CA (US);
Inventors:
Wenkan Jiang, Corona, CA (US);
Dirk Ehrentraut, Santa Barbara, CA (US);
Mark P. D'Evelyn, Santa Barbara, CA (US);
Assignee:
Soraa, Inc., Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 29/20 (2006.01); C30B 29/40 (2006.01); H01L 29/04 (2006.01); H01L 29/36 (2006.01); H01L 21/02 (2006.01); C30B 7/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); C30B 7/105 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); H01L 21/0237 (2013.01); H01L 21/02458 (2013.01); H01L 21/02642 (2013.01); H01L 21/02647 (2013.01); H01L 29/045 (2013.01); H01L 29/36 (2013.01); H01L 33/0075 (2013.01);
Abstract
Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.