The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Mar. 19, 2015
Altera Corporation, San Jose, CA (US);
Wen Wu, Mountain View, CA (US);
Yanzhong Xu, Santa Clara, CA (US);
Jeffrey T. Watt, Palo Alto, CA (US);
Altera Corporation, San Jose, CA (US);
Abstract
Illustratively, a finFET comprises at least one fin, and typically several fins, with a trapping region in or on a substrate at the base of each fin to trap ions produced by radiation incident on the substrate. In one embodiment, the trapping region is an implanted region having a conductivity type opposite that of the substrate. In another, the trapping region is a defect region. In another, the trapping region is an epitaxial region grown on the substrate. The finFET is formed by forming the fin or fins and then forming the trapping region at the base of the fin. Illustratively, the trapping region is formed by implanting in the substrate ions having a conductivity type opposite that of the substrate or by creating defects in the substrate or by epitaxially growing a region or regions having an opposite conductivity type to that of the substrate.