The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Nov. 20, 2014
Applicant:

Mediatek Inc., Hsin-Chu, TW;

Inventors:

Bo-Shih Huang, Hsinchu, TW;

Chien-Hui Chuang, New Taipei, TW;

Cheng-Chou Hung, Hsinchu, TW;

Assignee:

MEDIATEK INC., Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/73 (2006.01); H01L 29/78 (2006.01); H01L 23/60 (2006.01); H01L 29/788 (2006.01); H01L 29/06 (2006.01); H01L 29/74 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0603 (2013.01); H01L 29/0657 (2013.01); H01L 29/0688 (2013.01); H01L 29/45 (2013.01); H01L 29/7436 (2013.01);
Abstract

A semiconductor device comprising a substrate is disclosed. The substrate comprises: a well of type one; a first doped region of type two, provided in the well of type one; a well of type two, adjacent to the well of type one; and a first doped region of type one, doped in the well of type two. The substrate comprises no isolating material provided in a current path formed by the first doped region of type two, the well of type one, the well of type two and the first doped region of type one.


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