The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Oct. 30, 2015
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 21/28 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/045 (2013.01); H01L 21/02381 (2013.01); H01L 21/02452 (2013.01); H01L 21/02532 (2013.01); H01L 21/2807 (2013.01); H01L 21/28052 (2013.01); H01L 21/28518 (2013.01); H01L 29/16 (2013.01); H01L 29/45 (2013.01); H01L 29/66477 (2013.01); H01L 29/78 (2013.01);
Abstract
According to one embodiment, a semiconductor device includes a semiconductor layer including Ge; and a metal Ge compound region provided in a surface portion of the semiconductor layer. Sn is included in an interface portion between the semiconductor layer and the metal Ge compound region. A lattice plane of the semiconductor layer matches with a lattice plane of the metal Ge compound region.