The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Jul. 24, 2015
Chunghwa Picture Tubes, Ltd., Taoyuan, TW;
Der-Chun Wu, Taipei, TW;
Shin-Chuan Chiang, Taipei, TW;
Yu-Hsien Chen, Kaohsiung, TW;
Po-Lung Chen, Taoyuan, TW;
Yi-Hsien Lin, Taoyuan, TW;
Cheng-Jung Yang, Hualien County, TW;
Kuo-Hsing Tseng, New Taipei, TW;
Chunghwa Picture Tubes, Ltd., Taoyuan, TW;
Abstract
A method manufacturing a thin film transistor is provided. A gate, a first insulation layer covering the gate, a semiconductor layer over the gate, and a first photoresist pattern are sequentially formed on a substrate. The semiconductor layer is patterned into a channel layer by using the first photoresist pattern as a mask and the first photoresist pattern is subsequently shrunken to remain a portion of the first photoresist pattern on the channel layer. A conductive material layer covering the remained portion of the first photoresist pattern, the channel layer and the first insulation layer is patterned by using a second photoresist pattern as a mask to form a source and a drain separated by a gap region exposing the remained portion. The second photoresist pattern and the remained portion are removed by performing a stripping process to expose the channel layer between the source and the drain.