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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9543322 B1

PDFFull Text
Date of Patent:
Jan. 10, 2017

Filed:

Jun. 04, 2015

Methods for producing a thin film ferroelectric device using a two-step temperature process on an organic polymeric ferroelectric precursor material stacked between two conductive materials

Applicant:

Sabic Global Technologies B.v., Bergen op Zoom, NL;

Inventors:

Ji Hoon Park, Thuwal, SA;

Husam N. Alshareef, Thuwal, SA;

Ihab N. Odeh, Thuwal, SA;

Mohd A. Khan, Thuwal, SA;

Assignee:

SABIC Global Technologies B.V., Amsterdam, NL;

Attorney:

Norton Rose Fulbright US LLP

Primary Examiner:

Marc Armand

Assistant Examiner:

Younes Boulghassoul

Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); C09D 127/16 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01); H01L 37/02 (2006.01); H01L 41/113 (2006.01); H01L 41/193 (2006.01); H01L 41/317 (2013.01);
U.S. Cl.
CPC ...
H01L 27/1159 (2013.01); C09D 127/16 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/28176 (2013.01); H01L 21/321 (2013.01); H01L 27/11507 (2013.01); H01L 29/516 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09); H01L 37/025 (2013.01); H01L 41/1132 (2013.01); H01L 41/193 (2013.01); H01L 41/317 (2013.01);
Abstract

Methods for producing ferroelectric device are described. A method includes positioning an organic polymeric ferroelectric layer between two conductive materials to form a stack. The stack can be subjected to a 2-step heat treating process. The first heat treating step transforms the organic polymeric ferroelectric precursor to a ferroelectric material having ferroelectric hysteresis properties, and the second heat treating step densities the ferroelectric material to obtain the ferroelectric device. The thin film ferroelectric device can include a thin film ferroelectric capacitor, a thin film ferroelectric transistor, or a thin film ferroelectric diode.

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