The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Mar. 25, 2015
Applicants:

Hyunmin Lee, Seoul, KR;

Changseok Kang, Seongnam-si, KR;

Jongwon Kim, Hwaseong-si, KR;

Hyeong Park, Hwaseong-si, KR;

Inventors:

Hyunmin Lee, Seoul, KR;

Changseok Kang, Seongnam-si, KR;

Jongwon Kim, Hwaseong-si, KR;

Hyeong Park, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/535 (2013.01); H01L 27/11565 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Inventive concepts provide semiconductor memory devices and methods of fabricating the same. A stack structure and vertical channel structures are provided on a substrate. The stack structure includes insulating layers and gate electrodes alternately and repeatedly stacked on the substrate. The vertical channel structures penetrate the stack structure. Conductive pads are disposed on the vertical channel structures. An etch stopper covers sidewalls of the conductive pads. Pad contacts are disposed on the conductive pads to be in contact with the conductive pads. The pad contacts are further in contact with the etch stopper.


Find Patent Forward Citations

Loading…