The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Feb. 27, 2015
Applicant:
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Inventor:
Hideaki Tsuchiko, San Jose, CA (US);
Assignee:
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED, Sunnyvale, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/8232 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/808 (2006.01); H01L 29/866 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/8232 (2013.01); H01L 29/0619 (2013.01); H01L 29/808 (2013.01); H01L 29/866 (2013.01);
Abstract
One or more Zener diodes and a field effect transistor having a drain connected in series with the one or more Zener diodes are integrally formed by a plurality of doped regions in the same P-type semiconductor substrate and separated by a punch through stop region. An N-type region is formed under the one or more Zener diodes.