The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Mar. 30, 2015
Nxp B.v., Eindhoven, NL;
Joan Wichard Strijker, Nijmegen, NL;
Inesz Marycka Emmerik-Weijland, Malden, NL;
NXP B.V., Eindhoven, NL;
Abstract
The invention relates to a semiconductor isolation structure. More particularly, the present invention relates to a semiconductor isolation structure suitable for providing high voltage isolation. Embodiments disclosed include a semiconductor structure () comprising: a first semiconductor region (R), a second semiconductor region (R) within the first semiconductor region (R), and a voltage isolator () separating the first and second semiconductor regions (R, R), the voltage isolator () comprising: a nested series of insulating regions (T, T) around the perimeter of the second semiconductor region (R), an intermediate semiconductor region (I, I) between each adjacent pair of nested insulating regions (T, T), and a voltage control device () comprising a conducting element (D-D) connected to at least one intermediate semiconductor region (I, I) in parallel with the at least one insulating region (T, T), so as to control a voltage across the at least one insulating region (T, T).