The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Aug. 02, 2013
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/06 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/09 (2013.01); H01L 24/40 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/70 (2013.01); H01L 24/73 (2013.01); H01L 2224/03831 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/04073 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05578 (2013.01); H01L 2224/05599 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06133 (2013.01); H01L 2224/06153 (2013.01); H01L 2224/09133 (2013.01); H01L 2224/09153 (2013.01); H01L 2224/40095 (2013.01); H01L 2224/40245 (2013.01); H01L 2224/40247 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45155 (2013.01); H01L 2224/45157 (2013.01); H01L 2224/45166 (2013.01); H01L 2224/45169 (2013.01); H01L 2224/45176 (2013.01); H01L 2224/45181 (2013.01); H01L 2224/45184 (2013.01); H01L 2224/4847 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48101 (2013.01); H01L 2224/48153 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48453 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73271 (2013.01); H01L 2224/85181 (2013.01); H01L 2224/85205 (2013.01); H01L 2224/85207 (2013.01); H01L 2224/85399 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/053 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1205 (2013.01); H01L 2924/12031 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/1304 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13062 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/181 (2013.01);
Abstract
In accordance with an embodiment of the present invention, a semiconductor device includes a first bond pad disposed at a first side of a substrate. The first bond pad includes a first plurality of pad segments. At least one pad segment of the first plurality of pad segments is electrically isolated from the remaining pad segments of the first plurality of pad segments.