The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Jul. 11, 2012
Applicants:

Mamoru Terai, Chiyoda-ku, JP;

Shiori Idaka, Chiyoda-ku, JP;

Kei Yamamoto, Chiyoda-ku, JP;

Yoshiyuki Nakaki, Chiyoda-ku, JP;

Inventors:

Mamoru Terai, Chiyoda-ku, JP;

Shiori Idaka, Chiyoda-ku, JP;

Kei Yamamoto, Chiyoda-ku, JP;

Yoshiyuki Nakaki, Chiyoda-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/495 (2006.01); H01L 23/29 (2006.01); H01L 23/373 (2006.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01); H01L 29/16 (2006.01); H01L 23/31 (2006.01); H01L 23/433 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/56 (2013.01); H01L 21/78 (2013.01); H01L 23/293 (2013.01); H01L 23/3107 (2013.01); H01L 23/3171 (2013.01); H01L 23/3185 (2013.01); H01L 23/3736 (2013.01); H01L 23/4334 (2013.01); H01L 23/49579 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 29/1608 (2013.01); H01L 23/3135 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 25/072 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/0382 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/29101 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45014 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/4847 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/181 (2013.01); H01L 2924/351 (2013.01);
Abstract

A plurality of semiconductor devices provided on a silicon carbide substrate are provided with electrode layers, respectively. The silicon carbide substrate is cut at a region of an exposed surface of the silicon carbide substrate that separates the electrode layers to individually separate the semiconductor devices. A stress relaxation resin is applied to each individually separated semiconductor device to cover the exposed surface at a peripheral end portion of that surface of the semiconductor device which has the electrode layer thereon. A semiconductor apparatus can thus be obtained that also allows a semiconductor device with a silicon carbide or similar compound semiconductor substrate to adhere to a sealant resin via large adhesive strength and thus allows the sealant resin to be less crackable, less peelable and the like by thermal stress caused in operation.


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