The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
May. 10, 2016
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-shi, Kanagawa, JP;
Abstract
One embodiment includes a vertical n-channel power MOSFET for an output stage and a horizontal p-channel MOSFET for controlling the vertical n-channel power MOSFET are disposed on a single semiconductor substrate. The horizontal p-channel MOSFET has Psd (a p-type source region and a p-type drain region) formed in a self-aligning manner at a gate electrode. The Psd has p-type diffusion regions disposed therein causing the Psd to partially have a high impurity concentration. The p-type diffusion regions are connected to respective metal wiring layers through contact holes that are formed by ion implantation concurrently with a p-type diffusion region of the vertical n-channel power MOSFET and that have a width narrower than conventional contact holes. In this way, contact properties can be improved between the metal wiring layer and a semiconductor portion and size reductions can be achieved.