The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Feb. 24, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/82 (2006.01); H01L 21/765 (2006.01); H01L 29/06 (2006.01); H01L 21/301 (2006.01);
U.S. Cl.
CPC ...
H01L 21/82 (2013.01); H01L 21/765 (2013.01); H01L 29/0649 (2013.01);
Abstract
In accordance with an embodiment of the present invention, a method for forming a semiconductor device includes forming a device region in a substrate. The device region extends continuously from one sidewall of the substrate to an opposite sidewall of the substrate. The method further includes forming trenches in the substrate. The trenches divide the device region into active regions. The method also includes singulating the substrate by separating the substrate along the trenches.