The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Mar. 04, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Jamin Koo, Suwon-si, KR;
Youngseok Kim, Seoul, KR;
Kongsoo Lee, Hwaseong-si, KR;
Goeun Bae, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76895 (2013.01); H01L 21/28518 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76864 (2013.01); H01L 21/28035 (2013.01); H01L 23/53271 (2013.01);
Abstract
Provided is a method of fabricating a semiconductor device, the method including forming interconnection structures extending parallel to each other on a substrate; performing a coating process and forming a liquid state silicon source material layer filling an area between the interconnection structures; performing a first annealing process, curing the liquid state silicon source material layer, and forming an amorphous silicon layer; and crystallizing the amorphous silicon layer and forming contact plugs.