Method for growing graphene on surface of gate electrode and method for growing graphene on surface of source/drain surface

Abstract

The present invention provides a method for growing graphene on a surface of a gate electrode and a method for growing graphene on a surface of a source/drain electrode, in which a low-temperature plasma enhanced vapor deposition process is adopted to grow a graphene film, of which a film thickness is controllable, on a gate electrode or a source/drain electrode that contains copper, and completely coincides with a pattern of the gate electrode or the source/drain electrode. The manufacturing temperature of graphene is relatively low so that it is possible not to damage the structure of a thin-film transistor to the greatest extents and the supply of carbon sources that is used wide, having low cost and a simple manufacturing process, where existing PECVD facility of a thin-film transistor manufacturing line can be used without additional expense. The gate electrode or the source/drain electrode is covered with graphene and is prevented from contact with moisture and oxygen thereby overcoming the problem of a conventional TFT manufacturing process that a gate electrode or a source/drain electrode that contains copper is readily susceptible to oxidization. Further, the high electrical conductivity of graphene makes it possible not to affect the electrical performance of the entire device.