The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Dec. 12, 2013
Fujifilm Corporation, Minato-ku, Tokyo, JP;
Kenichi Umeda, Kanagawa, JP;
Atsushi Tanaka, Kanagawa, JP;
Masayuki Suzuki, Kanagawa, JP;
Tatsuya Shimoda, Ishikawa, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
A method for producing an amorphous oxide thin film includes: a pre-treatment process of selectively changing a binding state of an organic component, at a temperature lower than a pyrolysis temperature of the organic component, in a first oxide precursor film containing the organic component and In, to obtain a second oxide precursor film in which, when an infrared wave number range of from 1380 cmto 1520 cmin an infrared absorption spectrum obtained by performing a measurement by Fourier transform infrared spectroscopy is divided into an infrared wave number range of from 1380 cmto 1450 cmand an infrared wave number range of from more than 1450 cmto 1520 cm, a peak positioned within the infrared wave number range of from 1380 cmto 1450 cmexhibits the maximum value in the infrared absorption spectrum within an infrared wave number range of from 1350 cmto 1750 cm; and a post-treatment process of removing the organic component remaining in the second oxide precursor film, to transform the second oxide precursor film into an amorphous oxide thin film containing In.