The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Aug. 06, 2015
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventor:

Takuyo Kodama, Sagamihara, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/06 (2006.01); G11C 16/26 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/0483 (2013.01); G11C 16/32 (2013.01);
Abstract

A non-volatile semiconductor memory device includes a memory cell, and a sense amplifier that includes a latch unit, a first transistor having a first end electrically connected to the latch unit and a second end electrically connected to a first node, a second transistor having a first end electrically connected to the first node and a second end electrically connected to the memory cell, and a third transistor having a first end electrically connected to a second node between the first end of the first transistor and the latch unit. A control unit of the device controls the sense amplifier during a read operation, to charge the second node to a first voltage, and then charge the first node to a second voltage, turn on the second transistor after charging the first node to the second voltage, and turn on the third transistor after turning on the second transistor.


Find Patent Forward Citations

Loading…