The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Apr. 21, 2014
Applicant:

Marvell World Trade Ltd., St. Michael, BB;

Inventors:

Xueshi Yang, Cupertino, CA (US);

Tony Yoon, Los Altos, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 13/00 (2006.01); G06F 13/28 (2006.01); G06F 12/02 (2006.01); G06F 13/42 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0246 (2013.01); G06F 13/4239 (2013.01); G06F 2212/7202 (2013.01); G06F 2212/7208 (2013.01); G11C 11/5628 (2013.01); G11C 2211/5641 (2013.01);
Abstract

Devices, systems, methods, and other embodiments associated with accessing memory are described. In one embodiment, a method detects that a power quality associated with a volatile memory in a computing device meets a threshold value and in response thereto, reprogramming data from the volatile memory to a flash memory comprising multi-level cells. The reprogramming comprises: copying the data from the volatile memory, and writing the copied data: (1) to the most significant bits of the multi-level cells in the flash memory while skipping the least significant bits of the multi-level cells, or (2) to the least significant bits of the multi-level cells while skipping the most significant bits.


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