The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Oct. 19, 2015
Applicant:

Drs Network & Imaging Systems, Llc, Melbourne, FL (US);

Inventors:

Pradip Mitra, Colleyville, TX (US);

Jeffrey D. Beck, Plano, TX (US);

Mark R. Skokan, Carrollton, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 5/00 (2006.01); G01J 1/44 (2006.01); H01L 31/0296 (2006.01); H01L 31/103 (2006.01); H01L 31/0216 (2014.01); H01L 31/18 (2006.01); H01L 31/0232 (2014.01); H01L 31/024 (2014.01); H01L 31/101 (2006.01);
U.S. Cl.
CPC ...
G01J 1/44 (2013.01); H01L 31/024 (2013.01); H01L 31/0232 (2013.01); H01L 31/02161 (2013.01); H01L 31/02966 (2013.01); H01L 31/101 (2013.01); H01L 31/1032 (2013.01); H01L 31/1832 (2013.01);
Abstract

A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.


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