The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Apr. 03, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Chang-seung Lee, Yongin-si, KR;

Yong-sung Kim, Namyangju-si, KR;

Jeo-young Shim, Yongin-si, KR;

Joo-ho Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 33/487 (2006.01); B82Y 15/00 (2011.01); B82Y 99/00 (2011.01);
U.S. Cl.
CPC ...
B82Y 15/00 (2013.01); G01N 33/48721 (2013.01); B82Y 99/00 (2013.01);
Abstract

A nanogap device which may include a first insulation layer having a nanopore formed therein, a first channel layer which may be on the first insulation layer, a first source electrode and a first drain electrode which may be respectively in contact with both ends of the first channel layer, a second insulation layer which may cover the first channel layer, the first source electrode, and the first drain electrode, and a first nanogap electrode which may be on the second insulation layer and may be divided into two parts with a nanogap, which faces the nanopore, interposed between the two parts.


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